Publication Informations

Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
Authors: M. Zervos; C. N. Mihailescu; J. Giapintzakis; Andreas Othonos; A. Travlos; C. R. Luculescu
Year: 2015
Research Area: Optical Characterization
Type of Publication: Article
Journal Details
Journal: Nanoscale Research Letters
Volume: 10
Number: 1
Pages: 307
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800Â?Â{\textdegree}C and then exposed to H2S between 300 to 600Â?Â{\textdegree}C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300Â?Â{\textdegree}C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400Â?Â{\textdegree}C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4Â?eV corresponding to band edge emission from In2O3. In contrast, Sn:In2O3 nanowires grown on glass at 500Â?Â{\textdegree}C can be treated under H2S only below 200Â?Â{\textdegree}C which is important for the fabrication of Cu2S/Sn:In2O3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.
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